The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the world’s premier technical conference series for microelectronics and MEMS technology based on silicon carbide and related materials. ICSCRM 2011 will feature over 350 technical presentations and 30 exhibitors describing their latest findings and products to over 500 expected meeting attendees.
The aim of the conference is to present and discuss recent progress in crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other wide-band gap semiconductors involving III-nitrides and diamond. The scope will cover, but is not limited to, theoretical and experimental investigations. New research results relevant to wafer production processes, device fabrication technologies and device applications will also be topics of the conference.