Bridgelux Demonstrates Dramatic Advancements In Gan-On-Silicon Technology For Solid State Lighting
Mar 15, 2011 Bridgelux Inc., a developer and manufacturer of LED lighting technologies and solutions, announced that it has achieved a major breakthrough with the demonstration of 135 Lumens per Watt GaN-on-Silicon based LED Technology. This represents the industry’s first commercial grade performance for a Silicon-based LED.
The 135 Lumen per Watt performance was achieved at a CCT of 4730K using a single 1.5mm power LED operated at 350mA. These LEDs have extremely low operating voltages, requiring just 2.90V at 350mA and <3.25V at 1 Amp. The low forward voltage and excellent thermal resistance of the devices make them ideally suited for high-performance, illumination-grade applications. Optimization of the epitaxy process on 8-inch Si wafers will make LED manufacturing compatible with existing automated semiconductor lines.
The company is currently in discussions with a number of established semiconductor companies regarding the utilization of the many fully depreciated 8-inch semiconductor fabrication operations available around the globe.
Author: BIO T&T
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