AIXTRON Delivers G5 System for GaN/Si Applications to Korea´s LG Electronics
Sep 26, 2011 In the official press release AIXTRON SE today announced that LG Electronics Woomyeon R&D Campus (LG Electronics Advanced Research Institute), an existing customer in South Korea, has placed an order for one AIX G5 HT MOCVD system in a 8x6-inch wafer configuration. LGE will use the system to develop GaN-on-Si Power Electronics in partnership with AIXTRON. The contract also includes a cooperation agreement in order to optimize LGE´s GaN/Si processes and to accelerate its proprietary device-oriented production.
The reactor was ordered in the first quarter of 2011 and following delivery in the third quarter of 2011 will be installed and commissioned by a local AIXTRON service support team alongside the company’s already existing AIXTRON MOCVD systems at a state-of-the-art facility in South Korea.
AIXTRON equipment is particularly well suited for customers such as LGE who plan to transition from R&D to mass production. LGE’s application will also benefit from the excellent thickness uniformity across the wafers and across the plater as well as run-to-run dependability.
Both companies are locoing forward to a productive collaboration on this new project.
For more information please visit: http://www.aixtron.com/index.php?id=312&L=1&tx_ttnews[tt_news]=1761&tx_ttnews[backPid]=756&cHash=d423a8ae4be5ba36a180e47905a04870
Author: Alice Jones
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