Ammono S.A. Introduces New Class of High Transparency N-type Substrates

Sep 27, 2011
Ammono S.A., the world leader in ammonothermal gallium nitride (GaN) production has announced the "introduction of a new class of HIGH TRANSPARENCY" n-type substrates.

Ammono developed for over a decade technology that allowed gallium nitrade wafers with carrier concentrations ranging from 2x1017 and 2x1020 cm-3 to be manufactured. The current standard n-type product comes with a carrier concentration of 1019 cm-3. This progressive market change has led to Ammono's development of a new n-type material, rivalling other market models. It offers a higher transparency while with a lower carrier concentration of 3x1017 cm-3. For the LED and UV LED markets, the improved characteristics of the ammonothermal GaN substrates should add to product quality.

Currently, high transparency substrates will be offered by Ammono in 10 mm x 10 mm square wafers and circular 1" wafers. The dislocation density also remains at the best avaible level of 5x104 cm-2. 2012 may bring a 2" product using the new high-transparency material, in addtion to the standard 2" n-type.

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Author:  Rebecca Milne

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