AIXTRON provides G5 reactor for Power HEMT GaN-on-Si development to Infineon Technologies
Oct 25, 2011 AIXTRON SE today announced that its customer Infineon Technologies has reached the first stage in its plans to evaluate GaN-on-Si power HEMTs with the final acceptance of its new AIXTRON AIX G5 HT MOCVD reactor.
In September 2011, Infineon Technologies confirmed process acceptance of the system in a 8x6-inch wafer configuration with the option to upgrade to 5x8-inch.
Both companies look forward to a productive collaboration.
Official press release: http://www.aixtron.com/index.php?id=312&L=1&id=312&tx_ttnews[tt_news]=1767&tx_ttnews[backPid]=756&cHash=fc80f8535484bd8dcf7513dfd625a9bd
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