Polarization-matched LED Shows 18% Efficiency Increase

Mar 27, 2009

Using Gallium Indium Nitride/Gallium Indium Nitride (GaInN/GaInN) layer instead of conventional Gallium Indium Nitride/Gallium Nitride (GaInN/GaN), researches from Rensselaer Polytechnic Institute developed a new polarization-matched LED, which exhibits an 18% increase in light output.

The study, conducted in collaboration with Samsung Electro-Mechanics, discovered that mismatched polarization of material in LED chip causes "efficiency droop", a well-known phenomenon that provokes LEDs to loose efficiency, when current density increases.

Band diagram of conventional GaInN/GaN active region and new polarization-matched GaInN/GaInN active region of a light-emitting diode.
Band diagram of conventional GaInN/GaN active region and new polarization-matched GaInN/GaInN active region of a light-emitting diode.

The substitution of GaInN/GaNa with GaInN/GaInN allows the layers of the LED active region to have a better matched polarization, and in turn reduce both electron leakage and efficiency droop. The GaInN/GaInN MQW (Multi Quantum Well) LEDs have a lower forward voltage, a smaller diode ideality factor, and decreased wavelength shift as well.

Reference: Applied Physics Letters

Author:  Yaroslav Oleksenko

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