Sumitomo Electric and Soitec Announce Collaboration on Development of Engineered GaN Substrates
Dec 3, 2010 Sumitomo Electric Industries, Ltd. (Sumitomo Electric), a worldwide provider of compound semiconductor materials, and S.O.I.TEC Silicon On Insulator Technologies (Soitec), the world’s leading supplier of engineered substrates, have announced they are working together to develop engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline quality of Sumitomo Electric’s GaN wafer at a lower cost. This technology will therefore facilitate widespread use of GaN substrates in applications such as high brightness LEDs as well as electric power devices designed for hybrid and full electric vehicles.
“Our collaboration with Soitec will open the door to high quality, lower cost GaN substrates,” said Masamichi Yokogawa, Sumitomo Electric’s Executive Officer and General Manager of Compound Semiconductor Material Division. “It is the right approach to make our GaN material accessible for various applications such as power devices and white LEDs”.
Author: BIO T&T
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